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Preliminary DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0918A L & S BAND GaAs FET [ SMD non - matched ] FEATURES * High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm * High power gain Gp=20dB(TYP.) @f=1.9GHz * High power added efficiency hadd=45%(TYP.) @f=1.9GHz,Pin=8dBm * Hermetic Package APPLICATION * For UHF Band power amplifiers Fig.1 QUALITY * GG RECOMMENDED BIAS CONDITIONS * Vds=10V * Ids=150mA * Rg=1kW Delivery Tape & Reel (Ta=25C) Absolute maximum ratings Symbol VGSO Parameter Gate to sourcebreakdown voltage Ratings -15 -15 400 -1.2 5.0 3 175 -65 to +175 Unit V V mA mA mA W C C VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Electrical characteristics Symbol IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=1.0mA VDS=3V,ID=150mA VDS=10V,ID=150mA,f=1.9GHz Pin=8dBm VDS=10V,ID=150mA,f=1.9GHz DVf Method -1.0 25 - Limits Typ. 300 130 27 45 20 1.0 35 Max. 400 -5.0 50 Unit mA V mS dBm % dB dB C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric July 1999 MGF0918A TYPICAL CHARACTERISTICS Po,Gp,PAE vs.Pin 35 70 Vds=10V VDS=6V Id(off)=150mA ID=0.1A 30 f=1.9GHz f=1.9GHz 25 60 Po 50 Gp(dB),PAE(%) IM3(dBc) Po(dBm) 20 PAE 40 15 Gp 30 10 20 5 10 0 -10 -5 0 5 10 15 Pin(dBm) 0 P i( S C L ) v s .P o (S C L ),IM 3 30 25 20 15 Po(SCL)(dBm) 10 5 0 -5 -1 0 -1 5 -2 0 -2 0 -1 5 -1 0 -5 0 5 10 15 P in ( S C L )(d B m ) IM 3 V D =10V ID = 1 5 0 m A f1 = 1 .9 0 G H z f2 = 1 .9 1 G H z 30 20 Po 10 0 -1 0 -2 0 -3 0 -4 0 -5 0 -6 0 -7 0 Mitsubishi Electric July 1999 MGF0918A freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 S PARAMETERS S11 Mag 0.96 0.95 0.94 0.93 0.93 0.92 0.92 0.92 0.91 0.91 0.91 0.90 0.90 0.90 0.90 0.90 0.90 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.87 Ang(deg) -29.56 -45.03 -60.22 -72.06 -81.77 -90.08 -97.23 -103.61 -109.26 -114.47 -119.16 -123.61 -127.67 -131.51 -135.04 -138.46 -141.69 -144.72 -147.64 -150.46 -153.19 -155.82 -158.36 -160.81 -163.16 -165.43 -167.70 -169.88 -172.07 -174.18 -176.22 -178.26 179.68 177.61 (Ta=25C, VD=10V,ID=150mA, Reference Plane see Fig.1) S21 Mag 6.13 5.57 5.01 4.57 4.21 3.91 3.65 3.42 3.22 3.04 2.87 2.72 2.59 2.46 2.35 2.24 2.14 2.05 1.96 1.88 1.80 1.73 1.66 1.59 1.53 1.47 1.41 1.35 1.30 1.25 1.20 1.15 1.10 1.06 Ang(deg) 164.06 147.46 131.01 118.17 107.50 98.41 90.37 83.37 77.02 71.20 65.90 60.94 56.39 52.06 48.04 44.14 40.54 37.05 33.78 30.61 27.54 24.67 21.81 19.05 16.39 13.82 11.37 8.89 6.53 4.25 1.98 -0.30 -2.57 -4.85 Mag 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 S12 Ang(deg) 110.56 94.16 77.91 65.17 54.60 45.71 37.87 30.87 24.52 18.80 13.60 8.74 4.19 -0.04 -4.06 -7.86 -11.46 -14.85 -18.12 -21.29 -24.26 -27.23 -29.99 -32.65 -35.31 -37.88 -40.33 -42.71 -45.07 -47.35 -49.62 -51.90 -54.17 -56.45 Mag 0.24 0.31 0.37 0.42 0.46 0.49 0.52 0.55 0.57 0.59 0.61 0.63 0.65 0.66 0.68 0.69 0.70 0.71 0.72 0.73 0.74 0.75 0.76 0.77 0.77 0.78 0.79 0.79 0.80 0.81 0.81 0.82 0.82 0.83 S22 Ang(deg) -44.00 -56.07 -67.82 -77.03 -84.71 -91.25 -96.98 -102.08 -106.67 -110.93 -114.80 -118.34 -121.78 -124.92 -127.94 -130.76 -133.48 -136.01 -138.52 -140.91 -143.13 -145.33 -147.53 -149.54 -151.54 -153.54 -155.44 -157.26 -159.07 -160.79 -162.58 -164.38 -166.17 -167.97 K 0.11 0.14 0.19 0.23 0.26 0.28 0.32 0.34 0.37 0.39 0.42 0.43 0.46 0.50 0.50 0.53 0.57 0.60 0.63 0.63 0.66 0.69 0.73 0.75 0.75 0.78 0.81 0.85 0.88 0.91 0.90 0.91 0.91 0.91 MSG/MAG (dB) 24.89 24.29 23.66 23.11 22.60 22.13 21.87 21.45 21.21 20.82 20.60 20.23 20.03 19.83 19.48 19.29 19.10 18.92 18.73 18.41 18.22 18.04 17.86 17.68 17.36 17.18 17.00 16.81 16.63 16.44 16.11 15.78 15.45 15.11 2.0 Gate Mark Round corner (1) 0.80 0.8 Gate Mark (1) Reference Plane 4.20 (3) 1.20 Reference Plane (2) 4.00 (2) 0.25 2.5 0.6 (1) Gate (2) Drain (3) Source 0.3 B A C K S ID E P A T T E RN (Unit:mm) Fig.1 OU T LINE DR A W ING Mitsubishi Electric July 1999 2.8 |
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